NANOSTRUCTURES AND PHOTOVOLTAICS
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Members:
assos. prof. DSc. Vesselin Donchev
assos. prof. Dr Kiril Kirilov
PhD student Stefan Georgiev
student Ilia Stoyanov
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Research Field: Electronic and optical properties of semiconductor materials and nanostructures for optoelectronic and photovoltaic applications.
· Surface photovoltage (SPV) and photoluminescence spectroscopy studies of
i) Materials for
photovoltaics
a)
dilute nitrides -
InGaAs(Sb)N,
GaAsSbN grown by Liquide phase epitaxy
and Molecular beam epitaxy;
b)
perovskites and
perovskite/Si tandems;
ii) III-V nanostructures (quantum wells, superlattices, quantum wires, quantum dots) for optoelectronic applications (emitters, detectors);
· Calculations of the reflectivity and transmission spectra of multi-layer structures with rough interfaces.
Current projects:
·
Contract
№ КП-06-Рила/10 /16.12.2021г.
(2022-2023)
Perovskite materials and structures
for photovoltaics (PERMAVOLT)-
in frames of the French-Bulgarian collaboration program RILA 2021
·
Operational
Program “Science and Education for Smart Growth 2014 - 2020” under the Project CoE “National
center of mechatronics and clean technologies“ BG05M2OP001-1.001-0008
·
National
Research Program E+: Low Carbon Energy for
the Transport and Households (grant agreement D01-214/2018). Component 1:
Storage
and conversion of renewable energy ,
WP 1.4 Other methods for conversion and
storage of renewable energy. Task 1.4.1: New materials, technologies and systems for solar energy conversion;
Subtask 1.4.1.1. Innovative solar cells
based on new dilute nitride materials
Past projects
·
COST
action 1406 MultiscaleSolar - Multiscale in modelling and validation for
solar photovoltaics.(2015-2019)
Multiscalesolar creates a new network of experts
defragmenting knowledge on nanostructures applied to photovoltaics by combining
existing research activities to address key issues in in next generation solar
cells raised by academic and industrial end users.
·
Advanced Materials for next generation solar cells (2016-2018)
Contract No. ДКОСТ
01/16 with the National Science Fund
(Перспективни материали за следваща генерация слънчеви елементи)
Leader: assoc. Prof.
Dr. Vesselin Donchev
·
Advanced materials based on A3B5 dilute nitrides for next generation solar cells
Sofia University research fund, contract No. 71/2015
( Перспективни
материали на
основата на
разредени нитриди на
А3В5 съединения
за следваща
генерация
слънчеви
елементи – ФНИ на
СУ “Св.Кл.Охридски”, договор 71/2015г.)
Leader: assoc. Prof.
Dr. Vesselin Donchev
·
Investigation
of
A3B5 dilute nitrides for next generation solar cells
Sofia University research fund, contract No. 114
/2016
(Изследване
на разредени
нитриди на
А3В5 съединения
за следваща
генерация
слънчеви
елементи, ФНИ
на СУ “Св.Кл.Охридски”,
договор /2016г.)
Leader:
assoc. Prof. Dr. Vesselin Donchev
1.
Vesselin Donchev, Davide Regaldo, Stefan Georgiev, Aleksandra Bojar, Mattia da Lisca, Kiril Kirilov, José Alvarez,
Philip Schulz, and Jean-Paul Kleider
Surface Photovoltage Study of Metal Halide Perovskites
Deposited Directly on Crystalline Silicon
ACS Omega 8 (9) 8125–8133 (2023)https://doi.org/10.1021/acsomega.2c07664
2.
Aleksandra BOJAR, Davide Regaldo, José Alvarez, David Alamarguy, Vesselin
Donchev, Stefan Georgiev, Philip Schulz and
Jean-Paul Kleider
Surface photovoltage characterisation of metal halide
perovskite on crystalline silicon using Kelvin probe force microscopy and
metal-insulator-semiconductor configuration
EPJ Photovoltaics 13, 18 (2022) https://doi.org/10.1051/epjpv/2022016
3.
Vesselin Donchev, Malina Milanova, Stefan Georgiev
Surface Photovoltage
Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
Energies 15 (18) 6563 (2022) https://www.mdpi.com/1996-1073/15/18/6563
4.
V. Donchev, M. Milanova, K. Kirilov, S.
Georgiev, K.L. Kostov, G.M. Piana,
G. Avdeev,
Low-temperature LPE growth and
characterization of GaAsSb layers for photovoltaic
applications
J. Cryst. Growth, 574, 126335, (2021)
5.
Milanova, V. Donchev, K. J. Cheetham, Zh. Cao, I. Sandall, G. M. Piana,
O. S. Hutter, K. Durose, A. Mumtaz
Single-junction solar
cells based on p-i-n GaAsSbN heterostructures
grown by liquid phase
epitaxy
Solar energy 208, 659-664 (2020)
6.
M. Milanova, V. Donchev, B. Arnaudov,
D. Alonso-Álvarez, P. Terziyska
GaAsSbN-based
p-i-n heterostructures for solar cell applications
grown by liquid-phase
epitaxy
J. Mat. Sci.:Materials in Electronics 31 (3), 2073–2080 (2020)
7.
V. Donchev
Surface photovoltage
spectroscopy of semiconductor materials for optoelectronic applications
Mater. Res. Express 6 103001 (2019)
8.
V. Donchev, S. Georgiev, A. Aho, M. Guina
Surface photovoltage study of GaInAsN
layers for photovoltaic applications
J. Phys.: Conf. Series 1186 (1), 012003 (2019)
(oral presentation
at the 20th Jubilee International School on Condensed Matter
Physics, 03-07.09.2018 Varna,
Bulgaria
9.
M. Milanova V. Donchev, P. Terziyska,
E. Valcheva, S. Georgiev, K. Kirilov, I. Asenova, N. Shtinkov, Y. Karmakov, I. G. Ivanov
Investigation of LPE
grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications
AIP Conference Proceedings 2075, 140004 (2019);
https://doi.org/10.1063/1.5091319
(oral presentation
at the 10th Jubilee International Conference of the Balkan
Physical Union
29-30.08.2018, Sofia, Bulgaria)
10.
M. Milanova, V. Donchev, K. L. Kostov, D. Alonso-Álvarez, P. Terziyska, G. Avdeev, E. Valcheva, K. Kirilov and S. Georgiev
Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications
Mat. Res.Express 6 (7) 075521 (2019)
11.
V. Donchev, S. Georgiev, I. Leontis
and A. G. Nassiopoulou
Effective Removal
of Surface Recombination Centers in Silicon Nanowires
Fabricated by Metal-Assisted Chemical Etching
ACS Appl. Energy Mater. 1 (8)
3693–3701 (2018)
12.
V. Donchev , M. Milanova, I. Asenova,
N. Shtinkov, D. Alonso-Álvarez, A. Mellor, Y.
Karmakov, S. Georgiev and N. Ekins-Daukes
Effect of Sb in thick InGaAsSbN
layers grown by liquid phase epitaxy
J. Cryst. Growth 483 140–146
(2018)
13.
M. Milanova, V.
Donchev, K. Kostov, D. Alonso-Бlvarez, E.Valcheva,
K. Kirilov, I. Asenova,
I. G. Ivanov, S. Georgiev and N. Ekins-Daukes
Experimental
study of the effect of local atomic ordering on the energy band gap of melt
grown InGaAsN alloys
Semicond. Sci, Technol 32 (8)
085005 (2017)
14.
V. Donchev, I. Asenova, M. Milanova, D. Alonso-Álvarez, K. Kirilov, N. Shtinkov, I. G. Ivanov, S. Georgiev, E.
Valcheva and N. Ekins-Daukes
„Optical
properties of thick GaInAs(Sb)N layers grown by
liquid-phase epitaxy“
J. Phys.: Conf. Ser. 794, 012013 (2017)
15.
V. Donchev, M. Milanova, J. Lemieux, N. Shtinkov and I. G.
Ivanov
"Surface photovoltage and
photoluminescence study of thick Ga(In)AsN layers
grown by liquid-phase epitaxy
J.Physics:Conf. Ser. 700, 012028 (2016)
16.
V.Donchev, Ts. Ivanov, Ts. Ivanova, S. Mathews, J. O. Kim2 and S. Krishna
"Surface
photovoltage spectroscopy study of InAs quantum dot in quantum well multilayer
structures for infrared photodetectors”
Superlattices and Microstructures 88,
711–722 (2015)
17.
Ts. Ivanov, V.
Donchev, K. Germanova, Ts. Tellaleva, K. Borissov, V. Hongpinyo, P. Vines, J. P. R. David, and B. S. Ooi
"Investigation
of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well
multilayer structures for infrared photodetectors”
J.Physics:Conf. Ser. 356, 012032
(2012)
18.
T. Angelova,
N. Shtinkov, Ts. Ivanov, V. Donchev, A. Cantarero,
Ch. Deneke, O. G. Schmidt, and A. Cros
“Optical
and acoustic phonon modes in strained InGaAs/GaAs rolled up tubes"
Appl. Phys. Lett. 100 201904 (2012).
19.
V. Donchev,
D. Nesheva, D. Todorova, K. Germanova, E. Valcheva
“Characterization
of Si–SiOx nanocomposite layers by comparative analysis of computer simulated
and experimental infra-red transmission spectra“
Thin Solid Films 520 (6) 2085–2091
(2012)
20.
Ts. Ivanov,
V. Donchev, K. Germanova, P. F. Gomes, F. Iikawa, M. J. S. P. Brasil and M. A.
Cotta
“Optical
properties of multi-layer type II InP/GaAs quantum dots studied by surface
photovoltage spectroscopy“
J. Appl. Phys. 110 , 064302 (2011)
21.
F. Iikawa, V.
Donchev, Ts. Ivanov, G. O. Dias, L. H. G. Tizei, R.
Lang, E. Heredia, P. F. Gomes, M. J. S. P. Brasil, M. A. Cotta, D. Ugarte, J. P. Martinez Pastor, M. M. de Lima Jr., and A. Cantarero
“Spatial carrier distribution in InP/GaAs
type II quantum dots and quantum posts“
Nanotechnology 22,
065703 (2011).
22.
V Donchev, Ts
Ivanov, T Angelova, A Cros, A Cantarero,
N Shtinkov, K Borisov, D Fuster,
Y Gonzalez and L Gonzalez
”Surface photovoltage
and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires”
J. Phys. : Conf. Ser. 210 012041 (2010)
23.
Ts Ivanov, V
Donchev, T Angelova, A Cros, A Cantarero,
N Shtinkov, K Borissov, D Fuster, Y Gonzalez and L Gonzalez
”Characterisation
of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies”
J. Phys. : Conf. Ser. 253, 012043 (2010)
24.
V. Donchev,
Ts. Ivanov, K. Germanova, K. Kirilov
“Surface
photovoltage spectroscopy – an advanced method for characterization of
semiconductor nanostructures” (Review)
Trends in Applied spectroscopy 8,
27- 66 (2010)
25.
Ts. Ivanov,
V. Donchev, K. Germanova and K. Kirilov
“A
vector model for analyzing the surface photovoltage amplitude and phase spectra
applied to complicated nanostructures”
J.Phys.D: App.Phys. 42 (13) 135302
(2009)
26.
V. Donchev, K. Kirilov, Ts. Ivanov, K.
Germanova
“A
surface photovoltage spectroscopy study of GaAs/AlAs complicated nanostructures
with graded interfaces”
J. Appl. Phys. 101 (10) 124305
(2007)
27.
Ts. Ivanov,
V. Donchev, Y. Wang, H. S. Djie, and B. S. Ooi
“Interdiffused
InAs/InGaAlAs quantum dashes-in-well structures studied by surface photovoltage
spectroscopy”
J. Appl. Phys. 101 (11) 114309
(2007)
28.
V. Donchev, K. Kirilov, Ts. Ivanov, K.
Germanova
”Surface
photovoltage phase spectroscopy– a handy tool for characterisation of bulk
semiconductors and nanostructures”
Mat. Sci. & Engineering B: Solid State Materials for Advanced Technology 129 (1-3) 186-192 (2006)
29.
V. Donchev,
K. Germanova, N. Shtinkov, S. J. Vlaev
”Electronic structure and optical properties of AlAs/GaAs superlattices
containing embedded GaAs quantum wells with abrupt and graded interfaces”
in: Frontal Semiconductor Research , ed. Oliver T. Chang (Nova Science
Publishers, Inc. New York, 2006) Chap. 2, pp.25-60.
30.
K. Kirilov,
V. Donchev, Tsv. Ivanov, K. Germanova, P. Vitanov and P. Ivanov
”A surface
photovoltage spectroscopy system used for minority carrier diffusion length
measurements on floating zone silicon”
J. Optoel. & Adv. Mat. 7 (1)
533-536 (2005).
31.
Ts Ivanov,
V. Donchev, K Bachev, Y-H Ding, Y Wang, H S Djie and B S Ooi
“Bandgap
engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: A surface
photovoltage spectroscopy study”
J. Phys. : Conf. Ser. 113, 012033
(2008)