Research

 

Field:    Electronic and optical properties of semiconductor materials and nanostructures (optical, photoelectrical and electrical studies, computer simulations)

Subjects:

·       Surface photovoltage and photoconductivity spectroscopy of

      photovoltaic materials  and solar cell structures based on dilute nitrides (GaAsSbN/GaAs, InGaAs(Sb)N/GaAs) and perovskites/Si;

-        nanostructures (quantum wells, superlattices, quantum wires, quantum dots) for optoelectronic applications (emitters, IR detectors).     

·      Calculations of the reflectivity and transmission spectra of multi-layers with rough interfaces.

 

 

Nanostructures and Photovoltaics   

 

 

Research stays abroad:

 

 

10.2021

Visiting professor in the Group of electrical engineering (GeePs),  CentraleSupelec, University  Paris Saclay, France. Surface photovoltage studies of perovskite/Si structures.

 

 

06  - 07.2008    

Visiting Scientist in the Department of Condensed Matter Physics, Institute of Physics, "Gleb Wataghin" - UNICAMP, Campinas, Brazil, in the team of Prof. Fernando Iikawa (FAPESP fellowship) Optical studies of InP/GaAs multi-layer quantum dots.

 

 

 

11.2002-11.2003

Visiting Scientist in Dept. of Physics and Measurement Technology, Linköping University, in the team of Prof. Per-Olof Holtz (STINT fellowship). Optical studies of InAs quantum dots.

 

 

 

05 - 07.2002   

Chair for Semiconductor Physics, Institute for Technical Physics I, University of Erlangen, in the team of Prof. Dr. Gottfried Döhler (DAAD fellowship). Electrical properties of low-temperature grown GaAs

 

 

 

04 - 06.2001   

Associated researcher in the Laboratory of Disordered and Heterogeneous Materials, University Paris 6, in the team of Prof. J.C.Bourgoin. Electron transport in irradiated Quantum well IR Photodetectors.

 

 

 

11.1997-11.1998    

School of Physics and Astronomy, University of St.Andrews, in the team of Prof. Alan Miller. (Royal Society/NATO post-doctoral fellowship) Reflectivity of GaAs/AlAs multiple quantum wells with oxidised barriers.

 

 

 

10.1992-07.1993    

Institute of Micro- and Optoelectronics, EPFL, Switzerland, in the team of Prof. F.K.Reinhart (Swiss government fellowships). PL and PLE of GaAs/AlAs quantum wells and quantum wires.

 

01 - 06.1992

 

Group of Solid State Physics, University Paris 7,  in the team of Prof. J.C.Bourgoin.). (French government fellowship). Studies of DX-centers in AlGaAs and the band-offset of GaAs/GaInP heterojunctions